Charge induced pattern distortion in low energy electron beam lithography
نویسندگان
چکیده
Charge induced pattern distortions in low voltage electron beam lithography in the energy range of 1 to 5 kV were investigated. Pattern distortion on conducting substrates such as silicon was found to be small, while significant pattern placement errors and pattern distortions were observed in the case of electrically insulating substrates caused by charge trapping and deflection of the incident electron beam. The nature and magnitude of pattern distortions were found to be influenced by the incident electron energy, pattern size, electrical conductivity, and secondary electron emission coefficient of the substrate. Theoretical modeling predicts the electron beam deflection to be directly proportional to the trapped surface charge density and inversely proportional to the accelerating voltage. © 2000 American Vacuum Society. @S0734-211X~00!14506-8#
منابع مشابه
Nanoscale patterning on insulating substrates by critical energy electron beam lithography.
This Letter describes a method to generate nanometer scale patterns on insulating substrates and wide band gap materials using critical energy electron beam lithography. By operating at the critical energy (E2) where a charge balance between incoming and outgoing electrons leaves the surface neutral, charge-induced pattern distortions typically seen in e-beam lithography on insulators were prac...
متن کاملVariable Pressure Electron Beam Lithography (VP-eBL): A New Tool for Direct Patterning of Nanometer-Scale Features on Substrates with Low Electrical Conductivity
We introduce variable pressure electron beam lithography (VP-eBL), as a new approach for the fabrication of nanometer-scale structures on electrically insulating substrates. This novel approach combines the high-resolution patterning capability of electron beam lithography with the charge-balance mechanism of the variable pressure scanning electron microscope (VPSEM) to control charging effects...
متن کاملInterlayer and Intershot Charging-Induced Pattern Distortion on GaAs Substrates Exposed with a High Throughput Shaped Beam Electron Beam Lithography System
Electron beam lithography is a viable option for exposure of high-resolution patterns such as t-gates in GaAs manufacturing, in part due to the speed and ease of use of modern electron beam direct write tools. In order to achieve greater speed, these tools utilize higher beam current densities and variable shaped beams. The resulting higher beam currents at the resist surface, however, can crea...
متن کاملLow-Distortion Imaging Spectrometer Designs utilizing Convex Gratings 25-Word Abstract Imaging spectrometer designs capable of submicron distortion in both spectral and spatial directions are described, utilizing novel types of convex electron- beam-lithography-generated gratings
25-Word Abstract Imaging spectrometer designs capable of submicron distortion in both spectral and spatial directions are described, utilizing novel types of convex electron-beam-lithography-generated gratings.
متن کاملPerformance of the Raith 150 electron-beam lithography system
The performance of a Raith 150 electron-beam lithography system is reported. The system’s resolution, stability, intrafield distortion, stitching, and overlay performance are evaluated. Patterning at lowand high-acceleration voltages is compared. The system was used to pattern sub-20 nm features, and the largest intrafield distortion for a 100 mm field was measured to be 15 nm. Pattern-placemen...
متن کامل